METHOD OF FORMING SEMICONDUCTOR COMPOSITE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To form a patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by a porous Si technique. SOLUTION: A patterned SOI/SON composite structure and a method of forming the same are provided. In the SOI/SON composite structure, a patterned SOI/SON structure is sandwiched between an Si overlayer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes a shared processing treatment step wherein both SOI and SON structures are formed. This invention further provides a method of forming a composite structure including an embedded conductive/SON structure, and a method of forming a composite structure including only an embedded void plane. COPYRIGHT: (C)2011,JPO&INPIT