发明名称 POWER AMPLIFIER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power amplifier device that strikes a balance between the delivery of high power and the reduction of an exclusive area. SOLUTION: The power amplifier device 300 formed over a substrate includes primary inductors 1, 2 circular as a whole, ground patterns 4-8, transistor pairs (Q1p, Q1n) and (Q2p, Q2n), and a secondary inductor 3. The ground patterns 4-8 are provided to extend from a portion of a region on the inner side of the circular primary inductors 1, 2 into regions on the outer side, when viewed from a direction perpendicular to the substrate, and grounded at a plurality of points in the regions on the outer side. To both ends of each primary inductor 1, 2, first main electrodes of first and second transistors forming a corresponding transistor pair are coupled, respectively. Respective second main electrodes of the first and second transistors are coupled to the ground pattern in the region on the inner side of the primary inductor and have electrical conduction to all of the plurality of grounded points. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011182107(A) 申请公布日期 2011.09.15
申请号 JP20100042840 申请日期 2010.02.26
申请人 RENESAS ELECTRONICS CORP 发明人 KAWAKAMI TAKASHI;NISHIKAWA KAZUYASU
分类号 H03F3/24;H03F3/68 主分类号 H03F3/24
代理机构 代理人
主权项
地址