| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an SiC crystal, which ensures excellent crystallinity of the SiC crystal, to provide the SiC crystal, and to provide an apparatus for producing the SiC crystal. SOLUTION: The method for producing an SiC crystal includes following steps of: preparing a production apparatus 100 provided with a crucible 101 and a heat insulating material 121 for covering the outer periphery of the crucible 101; arranging a raw material 17 in the crucible 101; arranging a seed crystal 11 so as to oppose to the raw material 17 in the crucible 101; and growing the SiC crystal by heating the raw material 17 to sublimate it and depositing the resulting gas of the raw material on the seed crystal 11. The step of preparing the production apparatus 100 includes a step of arranging a heat dissipation part 131 composed of a space between the outer surface 101a of the seed crystal 11 side of the crucible 101 and the heat insulating material 121. COPYRIGHT: (C)2011,JPO&INPIT |
