ION DOPING APPARATUS AND DOPING METHOD THEREOF

摘要

An ion doping apparatus and a doping method are disclosed. In one embodiment, the apparatus includes a chamber, and a substrate driving unit configured to support and move a substrate in the chamber, wherein the substrate has a plurality of long sides and a plurality of short sides. The apparatus further includes an ion beam generator configured to generate and provide an ion beam having a width smaller than the length of the short sides of the substrate, wherein the substrate driving unit is further configured to move the substrate substantially perpendicular to the width direction of the ion beam.