| 摘要 |
A method of writing data into a memory cell of spin transfer torque magnetoresistive random access memory includes writing a first data into a first memory cell that includes a first magnetic-tunnel-junction element and a first selection transistor wherein an end of the first memory cell is connected to a first signal line and a different end of the first memory cell is connected to a common signal line during a first period, and writing a second data which is an opposite of the first data into the second memory cell that includes a second magnetic-tunnel-junction element and a second selection transistor wherein an end of the second memory cell is connected to a second signal line and a different end of the second memory cell is connected to the common signal line during a second period following the first period. |
