发明名称 SPHERICAL COMPOUND SEMICONDUCTOR CELL AND METHOD FOR MANUFACTURING MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a spherical compound semiconductor cell formed by using a compound semiconductor film which can suppress recombination and a leakage current. <P>SOLUTION: This spherical compound semiconductor cell includes: a spherical electrode, having at least the surface thereof formed of a conductor; a compound semiconductor layer formed on the surface of the spherical electrode and which has a chalcopyrite structure; buffer layers formed on the surface of the compound semiconductor layer; and a transparent electrode layer formed on the surfaces of the buffer layers. In the spherical compound semiconductor cell, recombination and a leak current are suppressed and photoelectric conversion efficiency is increased by having the cell structure that includes the buffer layers. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011181534(A) 申请公布日期 2011.09.15
申请号 JP20100041243 申请日期 2010.02.26
申请人 HITACHI LTD 发明人 NAITO HIROTO;YOSHIMOTO NAOKI
分类号 H01L31/04;H01L33/20 主分类号 H01L31/04
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