发明名称 PHOTOSENSITIVE RESIN COMPOSITION, THIN FILM THEREOF AND PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide: a photosensitive resin composition which has high photoreactivity, can be patterned and can form a film with high hydrophobicity and excellent dielectric properties; a thin film of the composition; and a pattern forming method. <P>SOLUTION: The photosensitive resin composition comprising a block copolymer and a photoacid generator, the block copolymer having a block containing a cationic polymerizable group (a polymer block of an epoxy group-containing vinyl monomer) and a polysilane block, is applied to a substrate, and a formed coating film is selectively exposed to actinic rays and developed to thereby form a film pattern (a protective film or an insulating film) with high hydrophobicity and excellent dielectric properties through photocationic polymerization of the cationic polymerizable group and photocleavage of the polysilane block. The film is useful to form a thin film transistor using an organic semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011180269(A) 申请公布日期 2011.09.15
申请号 JP20100042667 申请日期 2010.02.26
申请人 OSAKA GAS CO LTD;JAPAN SCIENCE & TECHNOLOGY AGENCY;OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE 发明人 KAWASAKI SHINICHI;FUJIKI TAKESHI;MATSUKAWA KOYO;HAMADA TAKASHI
分类号 G03F7/038;G03F7/004;G03F7/075;G03F7/40;H01L21/027 主分类号 G03F7/038
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