发明名称 Control voltage generation circuit and nonvolatile storage device having the same
摘要 Disclosed herein is a control voltage generation circuit including: a reference voltage generation circuit adapted to generate a reference voltage; and a voltage conversion circuit adapted to generate, based on the reference voltage, a control voltage to be supplied to the gate of a clamping transistor connected between a bit line and a sense amplifier to adjust the voltage of the bit line, wherein the voltage conversion circuit outputs a voltage, which is the sum of a voltage proportional to the reference voltage and a voltage equivalent to the threshold voltage of the clamping transistor, to the gate of the clamping transistor as the control voltage.
申请公布号 US2011222355(A1) 申请公布日期 2011.09.15
申请号 US201113064009 申请日期 2011.03.02
申请人 SONY CORPORATION 发明人 NAKASHIMA CHIEKO;NAMISE TOMOHIRO;SHIIMOTO TSUNENORI
分类号 G11C5/14;H03L5/00 主分类号 G11C5/14
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