| 摘要 |
Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first semiconductor layer doped with N type dopants, a first active layer on the first semiconductor layer, a second semiconductor layer doped with P type dopants on the first active layer, a second active layer on the second semiconductor layer, and a third semiconductor layer doped with N type dopants on the second active layer. A thickness of the second semiconductor layer is in a range of about 2000Åto about 4000Å, and doping concentration of the P type dopants doped in the second semiconductor layer is in a range of about 1018cm−3 to about 1021cm−3.
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