发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes.
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申请公布号 |
US2011223750(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US201113043017 |
申请日期 |
2011.03.08 |
申请人 |
HAYASHI HISATAKA;KAMINATSUI TAKESHI;UI AKIO |
发明人 |
HAYASHI HISATAKA;KAMINATSUI TAKESHI;UI AKIO |
分类号 |
H01L21/265;C23C16/515;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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