发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 According to an embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes: arranging a semiconductor substrate on a first electrode out of first and second electrodes arranged to be opposed to each other in a vacuum container; applying negative first pulse voltage and radio-frequency voltage to the first electrode, the negative first pulse voltage being superimposed with the radio-frequency voltage; applying negative second pulse voltage to the second electrode in an off period of the first pulse voltage; and processing the semiconductor substrate or a member on the semiconductor substrate by plasma formed between the first and second electrodes.
申请公布号 US2011223750(A1) 申请公布日期 2011.09.15
申请号 US201113043017 申请日期 2011.03.08
申请人 HAYASHI HISATAKA;KAMINATSUI TAKESHI;UI AKIO 发明人 HAYASHI HISATAKA;KAMINATSUI TAKESHI;UI AKIO
分类号 H01L21/265;C23C16/515;H01L21/3065;H01L21/31 主分类号 H01L21/265
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