发明名称 |
Method of Enhancing Photoresist Adhesion to Rare Earth Oxides |
摘要 |
A method and apparatus are described for fabricating metal gate electrodes (85, 86) over a high-k gate dielectric layer (32) having a rare earth oxide capping layer (44) in at least the NMOS device area by treating the surface of a rare earth oxide capping layer (44) with an oxygen-free plasma process (42) to improve photoresist adhesion, forming a patterned photoresist layer (52) directly on the rare earth oxide capping layer (44), and then applying a wet etch process (62) to remove the exposed portion of the rare earth oxide capping layer (44) from the PMOS device area.
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申请公布号 |
US2011223756(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US20100721738 |
申请日期 |
2010.03.11 |
申请人 |
SCHAEFFER JAMES K;LUCKOWSKI ERIC D;BAILEY TODD C;CHILD AMY L;JAEGER DANIEL;MO RENEE;TSANG YING H |
发明人 |
SCHAEFFER JAMES K.;LUCKOWSKI ERIC D.;BAILEY TODD C.;CHILD AMY L.;JAEGER DANIEL;MO RENEE;TSANG YING H. |
分类号 |
H01L21/28;H01L21/8238 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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