PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

An underlayer conductive member (207) is formed on the surface of a substrate (201) and in a hole part (205), and a resist (208) is formed on a part of the underlayer conductive member (207) on which a conductive material layer (209, 210) is not formed. The conductive material layer (209, 210) is formed on a part other the part having the resist (208) formed thereon, and a mask metal (212) is formed on the conductive material layer (209, 210). Subsequently, the resist (208) is removed, and the underlayer conductive member (207) is etched using the mask metal (212) as a mask, thereby forming the conductive material layer (209, 210) in a desired shape.