METHOD OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE USING THE SAME
摘要
<p>A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.</p>
申请公布号
KR20110100958(A)
申请公布日期
2011.09.15
申请号
KR20100020062
申请日期
2010.03.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SON, YONG HOON;JEONG, JIN HA;KIM, JUNG HO;URAZAEV VLADIMIR;KANG, JONG HYUK;HYUN, SUNG WOO