发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF DRIVING SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which requires a small occupied area and is highly integrated and has a larger memory capacity. <P>SOLUTION: The number of lines per unit memory cell is reduced by sharing a bit line by a writing transistor and a reading transistor. Information is written by turning on the writing transistor so that a potential of the bit line is supplied to a node where one of a source electrode and a drain electrode of the writing transistor and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of charge is held in the node. Information is read by supplying a predetermined reading potential to a reading signal line connected to one of a source electrode and a drain electrode of the reading transistor and then detecting a potential of the bit line. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011181911(A) |
申请公布日期 |
2011.09.15 |
申请号 |
JP20110019965 |
申请日期 |
2011.02.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KAWAE DAISUKE |
分类号 |
H01L21/8242;G11C11/405;H01L21/8247;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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