| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulating film using a condensation product solution which is especially suitable for filling up a trench formed in a substrate and having a narrow opening width and a high aspect ratio, has a long pot life, has satisfactory suitability for trench filling, has a low degree of cure shrinkage when burned and converted into silicon oxide, and has excellent crack resistance and HF resistance. SOLUTION: The method of forming an insulating film for filling a trench formed in a semiconductor element includes: an applying step of obtaining a coated substrate by applying, onto a substrate, a condensation product solution comprising a condensation product and a solvent, wherein the condensation product is obtained from condensation ingredients containing a polysiloxane compound derived from silane compounds with a specific structure and silica particles and the silane compounds include a tetrafunctional silane compound and a trifunctional silane compound; and a burning step of heating the coated substrate obtained in the applying step. COPYRIGHT: (C)2011,JPO&INPIT |
