发明名称 METHOD FOR MANUFACTURING SILICON DEVICE, AND METHOD FOR MANUFACTURING LIQUID JET HEAD
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon device capable of suppressing generation of a fragmentation or a crack of a silicon wafer during a manufacture process and generation of a foreign substance, and to provide a method for manufacturing a liquid jet head. SOLUTION: The method includes: forming a pressure generating element on the first wafer 110; forming a recess 131 deep enough for the first substrate 10 to be accommodated on the second wafer 130; forming a joint body 200 by joining the first wafer 110 in the recess 131 of the second wafer 130; forming a protective film 150 composed of an etching resistant material on at least the outer circumference of the surface of the second wafer 130 to which the first wafer 110 is joined, and covering the surface of the second wafer 110 with the protective film 150; working the surface of the joint body 200 on the side of the first wafer 110 until the surfaces of the first wafer 110 and the second wafer 130 form the same plane; and then dividing the joint body 200 into a plurality of chips each having a predetermined size. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011178145(A) 申请公布日期 2011.09.15
申请号 JP20100047506 申请日期 2010.03.04
申请人 SEIKO EPSON CORP 发明人 MIYAJI TSUKASA
分类号 B41J2/16;B41J2/045;B41J2/055 主分类号 B41J2/16
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