发明名称 |
PHOTOSENSITIVE SOLID STATE HETEROJUNCTION DEVICE |
摘要 |
The invention provides a solid-state p-n heterojunction comprising an organic p-type material in contact with an n-type material wherein said heterojunction is sensitised by at least one sensitizing agent, characterised in that the device comprises a cathode separated from said n-type material by a porous barrier layer of at least one insulating material. Also provided are optoelectronic devices such as solar cells or photo-sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device. |
申请公布号 |
WO2011110869(A2) |
申请公布日期 |
2011.09.15 |
申请号 |
WO2011GB50491 |
申请日期 |
2011.03.11 |
申请人 |
ISIS INNOVATION LIMITED;SNAITH, HENRY;DOCAMPO, PABLO |
发明人 |
SNAITH, HENRY;DOCAMPO, PABLO |
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