发明名称 PHOTOSENSITIVE SOLID STATE HETEROJUNCTION DEVICE
摘要 The invention provides a solid-state p-n heterojunction comprising an organic p-type material in contact with an n-type material wherein said heterojunction is sensitised by at least one sensitizing agent, characterised in that the device comprises a cathode separated from said n-type material by a porous barrier layer of at least one insulating material. Also provided are optoelectronic devices such as solar cells or photo-sensors comprising such a p-n heterojunction, and methods for the manufacture of such a heterojunction or device.
申请公布号 WO2011110869(A2) 申请公布日期 2011.09.15
申请号 WO2011GB50491 申请日期 2011.03.11
申请人 ISIS INNOVATION LIMITED;SNAITH, HENRY;DOCAMPO, PABLO 发明人 SNAITH, HENRY;DOCAMPO, PABLO
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