SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a semiconductor device (100) which is provided with: a substrate (1); a gate electrode (11) which is provided on the substrate; a gate insulating layer (12) which is formed on the gate electrode; an oxide semiconductor layer (13) which is formed on the gate insulating layer and has a channel region (13c), and also has a source region (13s) and a drain region (13d) respectively positioned on either side of the channel region; a source electrode (14) which is electrically connected to the source region; a drain electrode (15) which is electrically connected to the drain region; and a metal compound layer (16) which is positioned between the source electrode and the drain electrode, and is provided on the oxide semiconductor layer. The metal compound layer is an insulating layer or a semiconductor layer which is formed from a compound of a metal element that is the same as at least one of the metal elements contained in the source electrode and the drain electrode.