| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element improved in light extraction efficiency, and a method for manufacturing the same. <P>SOLUTION: The method includes the steps of: forming a first laminated film in which a p-type nitride semiconductor layer, an active layer with a multiple quantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer laminated on a first substrate 30 in this order; forming an n-electrode 44 on a top surface of the n-type nitride semiconductor layer; and forming unevenness on the top surface of the n-type nitride semiconductor layer by wet-etching the top surface of the n-type nitride semiconductor layer using an alkaline fluid except a region where the n-electrode is formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
