| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a manufacturing method of the nonvolatile semiconductor memory device, easily improving an allocation density of the nonvolatile memory cells containing a resistance change element. <P>SOLUTION: The non-volatile semiconductor memory device is equipped with: a plurality of first lines arranged in a first surface which is almost vertical to the surface of a semiconductor substrate, each line extending along the surface of the semiconductor substrate; a plurality of second lines arranged in a second surface along the first surface, each line extending almost vertically to the surface of the semiconductor substrate; and a plurality of nonvolatile semiconductor memory cells arranged at the position where the plurality of first lines and the plurality of second lines intersect. Each of the plurality of nonvolatile memory cells includes: a resistance change element; and a rectifier element connected in series to the resistance change element, and the resistance change element includes a portion where the first line intersects with the second line in the resistance change film which is continuously extended over the plurality of second lines between the first surface and the second surface. <P>COPYRIGHT: (C)2011,JPO&INPIT |
