| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To compute values X from values Y, on the basis of a model that determines the emission intensity Y values for a plurality of wavelengths from the plurality of actuator values X of an etching device, and to perform Run-to-Run control suited to the Y values. <P>SOLUTION: In the etching device, the relationship between the actuator values X and the emission intensity values Y is defined by a control model (a matrix model C1, a proportional constraint model C2) based on an algebraic expression takingΔX as the input and outputtingΔY. Etching control consists of repeating the following steps to etch each wafer: (S1) depending on an uncontrolled emission intensity value Y,ΔX (control amount) is computed fromΔY (control amount) on the basis of the control model, and a value X is set; (S2) the wafer is etched on the basis of a set value of the value X, and the value Y is monitored; and (S3) depending on a result value of the value Y, the uncontrolled emission intensity value (Y) used for processing the next wafer is calculated. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
