| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of a foreign matter during resist ashing after an interlayer insulation film for a via or wiring formation is opened and etched by a resist mask. SOLUTION: A method of manufacturing a semiconductor device includes: a lamination process of laminating, on a semiconductor substrate, an SiO<SB>2</SB>film 40, a stopper film 50 containing N, an antireflection film 60 and a resist pattern 70 in this order; an etching process of forming an opening by etching the antireflection film 60, the stopper film 50 and the SiO<SB>2</SB>film 40 by etching gas containing F by using the resist pattern 70 as a mask; and an ashing process performed after the etching process for ashing and removing the resist pattern 70 using a gas containing oxygen gas and an inactive gas in a condition satisfying (oxygen gas radical)/(inactive gas radical)≤5. COPYRIGHT: (C)2011,JPO&INPIT |
