| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology which can suppress the occurrence of splash even though a film is formed at high speed, when having used a sputtering target of an Al-base alloy. <P>SOLUTION: When crystal orientations of <001>, <011>, <111>, <012> and <112> in a normal line direction with respect to each face to be sputtered of a surface layer part, 1/4×t part and 1/2×t part of the sputtering target of the Ni-rare earth element-Al-base alloy have been observed, the sputtering target satisfies the following conditions (1) and (2): (1) when R is defined as the total area rate of <001>±15°, <011>±15° and <112>±15°, R is 0.35 or more but 0.8 or less, and (2) R<SB>a</SB>, R<SB>b</SB>and R<SB>c</SB>are in the range of ±20% of an R average value [R<SB>ave</SB>=(R<SB>a</SB>+R<SB>b</SB>+R<SB>c</SB>)/3]. <P>COPYRIGHT: (C)2011,JPO&INPIT |
