METHOD OF MANUFACTURING IGZO-BASED AMORPHOUS OXIDE THIN FILM AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an IGZO-based amorphous oxide thin film which has a desired electric resistance value within a range from a conductor region to an insulator region, and also has excellent stability against electrical stress and heat. SOLUTION: The present invention relates to the method of manufacturing the IGZO-based amorphous oxide thin film by forming the IGZO-based amorphous oxide thin film on a substrate by sputtering and then performing annealing processing, in which the amorphous oxide thin film having the arbitrary electric resistance value within the range from the conductor region to the insulator region is manufactured by changing a combination of an amount of water in a film forming device and temperature of the annealing processing. COPYRIGHT: (C)2011,JPO&INPIT