| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which allows the reduction in lateral extension to reduce an element size. <P>SOLUTION: A first and second fins extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them, are formed. A first height is defined as a dimension between a top surface of the STI region and top surfaces of the first and second fins. A dielectric material is deposited into the space between the STI region and the first and second fins. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
