| 摘要 |
The invention is to improve the light emitting efficiency of a light emitting diode by designing a specific distribution doped with the multi quantum well structure of n-type impurity. A light emitting device(30) comprises an n-type semiconductor layer; a p-type semiconductor; a first region(35Ai) between the n-type and the p-type semiconductor layer, adjacent to the n-type semiconductor layer; a second region(35Bi) adjacent to the p-type semiconductor layer, a middle region(35Ci) between the first and the second region. The first and the second region are doped with the n-type impurity. The middle region has no n-type impurity or a lower concentration of n-type impurity than the first and second region. |
