| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP (Chemical Mechanical Polishing) polishing liquid and polishing method, which increase a polishing rate of a palladium layer in comparison with that using conventional polishing liquids while maintaining a polishing rate of a foundation metal layer and which suppress coagulation sedimentation of abrasive grains. SOLUTION: The CMP polishing liquid contains a 1.2.4-triazole, phosphoric acids, an oxidant, first abrasive grains of which the surfaces are anion-modified, and second abrasive grains of which the surfaces are not anion-modified. The first abrasive grains and the second abrasive grains each have a mean secondary grain size of 30 to 100 nm, and the degree of association of the first abrasive grains and the second abrasive grains is 1.7 to 2.3, and a proportion of a content of the first abrasive grains to the total of the content of the first abrasive grains and the content of the second abrasive grains is 5.0 to 70.0 mass%, and the CMP polishing liquid has pH of≤7. The polishing method includes a polishing step of polishing a substrate with a polishing cloth while supplying the CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate includes a foundation metal layer 3 and an under barrier metal layer 4 being a palladium layer. COPYRIGHT: (C)2011,JPO&INPIT |
