发明名称 |
MOSFETs WITH REDUCED CONTACT RESISTANCE |
摘要 |
A method and structure for forming a field effect transistor with reduced contact resistance are provided. The reduced contact resistance is manifested by a reduced metal semiconductor alloy contact resistance and a reduced conductively filled via contact-to-metal semiconductor alloy contact resistance. The reduced contact resistance is achieved in this disclosure by texturing the surface of the transistor's source region and/or the transistor's drain region. Typically, both the source region and the drain region are textured in the present disclosure. The textured source region and/or the textured drain region have an increased area as compared to a conventional transistor that includes a flat source region and/or a flat drain region. A metal semiconductor alloy, e.g., a silicide, is formed on the textured surface of the source region and/or the textured surface of the drain region. A conductively filled via contact is formed atop the metal semiconductor alloy.
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申请公布号 |
US2011221003(A1) |
申请公布日期 |
2011.09.15 |
申请号 |
US20100719934 |
申请日期 |
2010.03.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;CHENG KANGGUO;KHAKIFIROOZ ALI;KULKARNI PRANITA |
分类号 |
H01L29/417;H01L21/3205;H01L21/336;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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