发明名称 PHASE-SHIFT PHOTOMASK AND PATTERNING METHOD
摘要 <p>A phase shift photomask blank has a quartz substrate, a lower chrome layer, a light-absorbing MoSi layer, and an upper chrome layer. This mask can be patterned in various ways to form a patterned photomask with both phase shift and binary areas.</p>
申请公布号 WO2011090579(A3) 申请公布日期 2011.09.15
申请号 WO2010US59418 申请日期 2010.12.08
申请人 INTEL CORPORATION;OLSON, BENNETT;LAU, MAX;MA, CHENG-HSIN;MA, JIAN;JAMIESON, ANDREW, T. 发明人 OLSON, BENNETT;LAU, MAX;MA, CHENG-HSIN;MA, JIAN;JAMIESON, ANDREW, T.
分类号 H01L21/027;G03F1/08 主分类号 H01L21/027
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