| 摘要 |
<p>Disclosed is a solid-state image pickup device wherein a pixel (11) thereof is provided with: a first conductivity type first semiconductor layer (1) , which is formed on a substrate; a second conductivity type second semiconductor layer (2) on the first semiconductor layer; first conductivity type third semiconductor layers (5a, 5b), which are formed in an upper side surface region on the second semiconductor layer (2); second conductivity type fourth semiconductor layers (6a, 6b), which are formed in the outer side surface regions of the third semiconductor layers (5a, 5b); gate conductor layers (4a, 4b), which are formed in the lower side surface regions of the second semiconductor layer (2) with insulating films (3a, 3b) therebetween; and a second conductivity type fifth semiconductor layer (7), which is formed on the upper surface of the second semiconductor layer (2) and on the upper surfaces of the third semiconductor layers (5a, 5b). The fifth semiconductor layer (7) and the fourth semiconductor layers (6a, 6b) are connected, and at least the third semiconductor layers (5a, 5b), the upper region of the second semiconductor layer (2), the fourth semiconductor layers (6a, 6b), and the fifth semiconductor layer (7) are formed within an island shape.</p> |
