<p>A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.</p>
申请公布号
EP1771888(B1)
申请公布日期
2011.09.14
申请号
EP20050759916
申请日期
2005.07.12
申请人
NXP B.V.
发明人
SURDEANU, RADU;AGARWAL, PRABHAT;BALKENENDE, ABRAHAM RUDOLF;BAKKERS, ERIK, P., A., M.