发明名称 High-voltage vertical FET and method of manufacturing the same
摘要 <p>In one embodiment, a transistor fabricated on a semiconductor die is arranged into sections of elongated transistor segments. The sections are arranged in rows and columns substantially across the semiconductor die. Adjacent sections in a row or a column are oriented such that the length of the transistor segments in a first one of the adjacent sections extends in a first direction, and the length of the transistor segments in a second one of the adjacent sections extends in a second direction, the first direction being substantially orthogonal to the second direction. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.</p>
申请公布号 EP2365533(A2) 申请公布日期 2011.09.14
申请号 EP20110168216 申请日期 2007.11.28
申请人 POWER INTEGRATIONS, INC. 发明人 PARTHASARATHY, VIJAY
分类号 H01L29/78;H01L21/77;H01L29/06;H01L29/40;H01L29/423 主分类号 H01L29/78
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