发明名称 |
Light emitting device and light emitting device package |
摘要 |
<p>A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm.</p> |
申请公布号 |
EP2365546(A2) |
申请公布日期 |
2011.09.14 |
申请号 |
EP20110153484 |
申请日期 |
2011.02.07 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KIM, SUNG KYOON;LIM, WOO SIK;KIM, MYEONG SOO;CHOO, SUNG HO |
分类号 |
H01L33/42 |
主分类号 |
H01L33/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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