| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor that can appropriately secure its sensing precision at the time of sensing a prescribed physical quantity by using a resistor. <P>SOLUTION: In this semiconductor sensor, a silicon oxide film 120 is formed on a semiconductor substrate 110. In addition, an upstream-side heater Rha, a downstream-side heater Rhb, lead sections L2 and L5, and upstream-side thermometers Rka are formed on the silicon oxide film 120. The heaters Rha and Rhb, lead sections L2 and L5, and thermometers Rka are covered with a silicon nitride film 140. All of the heaters Rha and Rhb, thermometers Rka, and lead sections L2 and L5 are formed of monocrystallized silicon films. The monocrystallized silicon films are pattern-formed as areas where they do not become thermal oxidation films even in thermal oxidation treatment. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
