SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND DOPANT DIFFUSION RETARDING IMPLANTS AND RELATED METHODS

摘要

A semiconductor device (100) may include a substrate (101) and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel (125) including a plurality of stacked groups of layers, a source (102) and a drain (103) adjacent the superlattice channel, and a gate (106) adjacent the superlattice channel. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non - semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A first dopant may be in at least one region adjacent at least one of the source and drain, and a second dopant may also be in the at least one region. The second dopant may be different than the first dopant and reduce diffusion thereof.