发明名称 |
Method and apparatus for irradiating a semiconductor material surface by laser energy |
摘要 |
<p>The present invention is related to an apparatus for irradiating semiconductor material comprising:
- a laser generating a primary laser beam;
- an optical system;
- and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams; characterized in that the shape and/or size of the individual apertures corresponds to the shape and/or size of a common region of a semiconductor material layer to be irradiated, and that the optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the present invention is related to the use of such an apparatus in semiconductor device manufacturing.</p> |
申请公布号 |
EP2364809(A1) |
申请公布日期 |
2011.09.14 |
申请号 |
EP20100290098 |
申请日期 |
2010.02.26 |
申请人 |
EXCICO FRANCE |
发明人 |
BESAUCELE, HERVE;GODARD, BRUNO;DUTEMS, CYRIL |
分类号 |
B23K26/06;G02B27/09;H01L21/324 |
主分类号 |
B23K26/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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