发明名称 Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same
摘要 <p>Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.</p>
申请公布号 EP2365554(A2) 申请公布日期 2011.09.14
申请号 EP20110157516 申请日期 2011.03.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, CHANG-JUNG;KIM, YOUNG-BAE;HUR, JI-HYUN;LEE, DONG-SOO;CHANG, MAN;LEE, CHANG-BUM;LEE, SEUNG-RYUL
分类号 H01L45/00;G11C13/00 主分类号 H01L45/00
代理机构 代理人
主权项
地址