发明名称 Method for forming pattern, method for manufacturing light emitting device, and light emitting device
摘要 Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a silane coupling agent film is formed and the surface of the substrate is modified to be liquid-repellent; and the surface of the substrate is irradiated with light of a wavelength (less than to equal to 390 nm) which has energy of greater than or equal to a band gap of a material for forming the photocatalytic conductive film, so that only the silane coupling agent film over the surface of the photocatalytic conductive film is decomposed and the surface of the photocatalytic conductive film can be modified to be lyophilic.
申请公布号 US8017422(B2) 申请公布日期 2011.09.13
申请号 US20080135252 申请日期 2008.06.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJII GEN;TAKAHASHI ERIKA
分类号 H01L33/00;H01L51/50;H05B33/10;H05B33/22 主分类号 H01L33/00
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