发明名称 |
Modifying work function in PMOS devices by counter-doping |
摘要 |
A semiconductor structure comprising an SRAM/inverter cell and a method for forming the same are provided, wherein the SRAM/inverter cell has an improved write margin. The SRAM/inverter cell includes a pull-up PMOS device comprising a gate dielectric over the semiconductor substrate, a gate electrode on the gate dielectric wherein the gate electrode comprises a p-type impurity and an n-type impurity, and a stressor formed in a source/drain region. The device drive current of the pull-up PMOS device is reduced due to the counter-doping of the gate electrode.
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申请公布号 |
US8017473(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20100791656 |
申请日期 |
2010.06.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE CHUN-YI;CHUANG HARRY;WANG PING-WEI;THEI KONG-BENG |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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