发明名称 Sense amplifier circuit and related configuration and operation methods
摘要 A sense amplifier circuit is provided with a first transistor arrangement comprising a first n-type field effect transistor (NFET) having a respective body node, and a second transistor arrangement comprising a second NFET having a respective body node. The second transistor arrangement is electrically coupled to the first transistor arrangement, and the body node of the first NFET is electrically coupled to the body node of the second NFET. The sense amplifier circuit also includes or cooperates with a voltage condition selector that is electrically coupled to the body node of the first NFET and to the body node of the second NFET. The voltage condition selector is configured to assert one of a plurality of voltage conditions at the body node of the first NFET and at the body node of the second NFET.
申请公布号 US8018253(B2) 申请公布日期 2011.09.13
申请号 US20090549961 申请日期 2009.08.28
申请人 ADVANCED MICRO DEVICES, INC. 发明人 SCHREIBER RUSSELL;KASPRAK KEITH
分类号 G01R19/00;G11C7/00;H03F3/45 主分类号 G01R19/00
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