发明名称 |
Non-volatile memory devices and methods of erasing non-volatile memory devices |
摘要 |
In one embodiment, an erase method for a memory including a memory array having at least first and second programmable transistors connected in series, includes restricting flow of electrons from the first programmable transistor into the second programmable transistor during an erase operation.
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申请公布号 |
US8018782(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20090486056 |
申请日期 |
2009.06.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KITAE;KIM DOOGON;KIM MOOSUNG;KIM HANSOO |
分类号 |
G11C16/04;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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