| 摘要 |
A thin film transistor (“TFT”) array panel according to an exemplary embodiment of the present invention includes a substrate, a first storage electrode formed on the substrate, a first TFT formed on the substrate and separated from the first storage electrode, a first insulating layer formed on the first storage electrode and the first TFT and having a first opening disposed on the first storage electrode, a pixel electrode connected to the first TFT and overlapping the first storage electrode in the first opening, and a second insulating layer disposed between the first storage electrode and the pixel electrode in the first opening, wherein at least a portion of the boundary of the pixel electrode overlaps the first storage electrode and is disposed in the first opening. Accordingly, storage appropriate capacitance is ensured and a reduction of the aperture ratio may be decreased.
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