发明名称 Method of arranging data in a multi-level cell memory device
摘要 A method of storing data includes storing a first portion of data in bit positions of a non-volatile memory having a first probability of error; storing a second portion of the data in bit positions of the non-volatile memory having a second probability of error, wherein the second probability of error is lower than the first probability of error; storing error correction parity bits with the data; and applying an error correction scheme to read data using the error correction parity bits, wherein at least one bit of the first portion is checked for correction before any bit of the second portion is checked for correction. The error correction scheme is stopped before checking for correcting of all the data.
申请公布号 US8020060(B2) 申请公布日期 2011.09.13
申请号 US20070623328 申请日期 2007.01.16
申请人 SANDISK IL LTD 发明人 MURIN MARK
分类号 H04L1/00;G06F11/30;G08C25/00;H03M13/00 主分类号 H04L1/00
代理机构 代理人
主权项
地址