发明名称 Processing method
摘要 A multichamber-type processing apparatus and processing method using same, in which a substrate is reliably neutralized without being damaged, thereby ensuring excellent accuracy and throughput. The processing apparatus includes a transfer chamber, etching chambers selectively communicating with the transfer chamber and providing a space to etch a first substrate therein, and ashing chambers selectively communicating with the transfer chamber and providing a space to ash a second substrate therein. A transfer mechanism is installed in the transfer chamber to sequentially transfer the substrate from the transfer chamber into the etching and ashing chambers. The substrate is electrostatically adsorbed to electrostatic chucks in the etching and ashing chambers. An monatomic nitrogen atom supply unit supplies dissociated monatomic nitrogen atoms into the etching and ashing chambers.
申请公布号 US8017525(B2) 申请公布日期 2011.09.13
申请号 US20080238066 申请日期 2008.09.25
申请人 TOKYO ELECTRON LIMITED 发明人 ITO TAKASHI
分类号 H01L21/302;H01L21/3065;H01L21/00;H01L21/306;H01L21/68;H01L21/683;H01L21/768;H05F3/06 主分类号 H01L21/302
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