Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same

摘要

An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the gate insulating film. Source/drain regions are formed to be separated from each other in a surface region of the semiconductor substrate. The source/drain regions sandwich a channel region formed below the gate insulating film. Gate sidewall films are formed on the two side surfaces of the gate electrode. Silicide films are formed on the source/drain regions so as to be separated from the element isolation region.