发明名称 |
Method of fabricating low on-resistance lateral double-diffused MOS device |
摘要 |
A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.
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申请公布号 |
US8017486(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20070767205 |
申请日期 |
2007.06.22 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HUANG HSUEH-I;CHU CHIEN-WEN;LIN CHENG-CHI;LIEN SHIH-CHIN;YEH CHIN-PEN;WU SHYI-YUAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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