| 摘要 |
A field effect transistor includes a source region and a drain region in contact with a channel region. The source and drain regions are formed in insulating pockets that cause the source and drain regions to be electrically isolated from the substrate, thereby minimizing junction capacitance and device crosstalk. The structures that define the insulating pockets can be insulating layers formed in one or more wells in the substrate, or can be a blanket insulating formed over the substrate in which a well is formed to contain the transistor.
|
