| 摘要 |
The present invention is directed to manufacturing an organic transistor with an organic semiconductor film formed by a coating method, without involving a process of forming a rib for forming the organic semiconductor film. To be more specific, the organic transistor of the present invention includes: (1) a source electrode part and a drain electrode part which are formed on a substrate; (2) rib selectively formed on part of the source electrode part and the drain electrode part; (3) an organic semiconductor film placed in the region defined by the ribs and connecting the source electrode part and the drain electrode part; and (4) a gate electrode formed on the organic semiconductor film through a gate insulating film. The organic transistor of the present invention is characterized in that there is a gap between the rib formed on the source electrode part and the rib formed on the drain electrode part.
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