Ion implantation method and apparatus

摘要

An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surface of the substrate. A dose distribution that is non-uniform within the plane of the substrate is formed within the plane of the substrate by changing at least one of a scanning speed of the ion beam and a driving speed of the substrate within an area where the ion beam is incident on the substrate.