发明名称 Semiconductor memory device
摘要 A method of forming a circuit includes providing a substrate; providing an interconnect region positioned on the substrate; bonding a device structure to a surface of the interconnect region; and processing the device structure to form a first stack of layers on the interconnect region and a second stack of layers on the first stack. The width of the first stack is different than the width of the second stack.
申请公布号 US8018058(B2) 申请公布日期 2011.09.13
申请号 US20050092500 申请日期 2005.03.29
申请人 BESANG INC. 发明人 LEE SANG-YUN
分类号 H01L23/48;H01L21/20;H01L21/30;H01L21/336;H01L21/46;H01L21/58;H01L27/108;H01L27/148 主分类号 H01L23/48
代理机构 代理人
主权项
地址