发明名称 |
Semiconductor memory device |
摘要 |
A method of forming a circuit includes providing a substrate; providing an interconnect region positioned on the substrate; bonding a device structure to a surface of the interconnect region; and processing the device structure to form a first stack of layers on the interconnect region and a second stack of layers on the first stack. The width of the first stack is different than the width of the second stack.
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申请公布号 |
US8018058(B2) |
申请公布日期 |
2011.09.13 |
申请号 |
US20050092500 |
申请日期 |
2005.03.29 |
申请人 |
BESANG INC. |
发明人 |
LEE SANG-YUN |
分类号 |
H01L23/48;H01L21/20;H01L21/30;H01L21/336;H01L21/46;H01L21/58;H01L27/108;H01L27/148 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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